BLM3407

金屬氧化物半導(dǎo)體場效應(yīng)管：P-Channel,單通道,-30V（VDS Limit）; ? High power and current handing capability\n? Lead free product is acquired\n? Surface mount Package\n;

The BLM3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.\n\n

BLM3407

P-Channel Enhancement Mode Power MOSFET

BLM3407AY

溝槽柵金屬氧化物半導(dǎo)體場效應(yīng)管; ? ● High density cell design for ultra low Rdson\n? ● Fully characterized Avalanche voltage and current\n;

\n The BLM3407AY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.\n

BLM3407A

P-Channel Enhancement Mode Power MOSFET;

BM3407

P-Channel30V(D-S)4AP-MOSFET

CEM3407L

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-5.1A,RDS(ON)=48m?@VGS=-10V. RDS(ON)=65m?@VGS=-4.5V. RDS(ON)=115m?@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CEM3407L

DualP-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-5.1A,RDS(ON)=48mW@VGS=-10V. RDS(ON)=65mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. RDS(ON)=115mW@VGS=-2.5V.

CJ3407

P-ChannelEnhancementModeFieldEffectTransistor

CJ3407

SOT-23Plastic-EncapsulateMOSFETS

CJK3407

P-Channel30-V(D-S)MOSFET