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NP80N06CLD

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=13mW(MAX.)(VGS=10V,ID=40A) RDS(on)2=17mW(MAX.)(VGS=5V,ID=40A) ·LowCiss:Ciss=2360pF(TYP.) ·Built-inGateprotectiond

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06DLC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ·Channeltemperature175degreerated ·Superlowon-stateresistance RDS(on)1=15mWMAX.(VGS=10V,ID=40

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06DLD

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP80N06DLD

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=13mW(MAX.)(VGS=10V,ID=40A) RDS(on)2=17mW(MAX.)(VGS=5V,ID=40A) ·LowCiss:Ciss=2360pF(TYP.) ·Built-inGateprotectiond

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06ELC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ·Channeltemperature175degreerated ·Superlowon-stateresistance RDS(on)1=15mWMAX.(VGS=10V,ID=40

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06ELD

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP80N06ELD

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=13mW(MAX.)(VGS=10V,ID=40A) RDS(on)2=17mW(MAX.)(VGS=5V,ID=40A) ·LowCiss:Ciss=2360pF(TYP.) ·Built-inGateprotectiond

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06MLG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP80N06MLG

N-Channel60V(D-S)MOSFET

FEATURES ?175°CJunctionTemperature ?TrenchFET?PowerMOSFET ?Materialcategorization:

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

NP80N06MLG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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2022+
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50000
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藍(lán)箭
23+
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25000
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30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
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佛山藍(lán)箭
25+
TO-TO-220
12300
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2447
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105000
50個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
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BLUE ROCKET(藍(lán)箭)
20+
TO-220
1000
詢價(jià)
24+
N/A
61000
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Bluerocke
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Bluerocke
18+
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41200
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BILIN
23+
NA
19960
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更多BR80N06供應(yīng)商 更新時(shí)間2025-7-29 10:06:00

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