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BTS410E2E3062A中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書
BTS410E2E3062A規(guī)格書詳情
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS? technology. Providing embedded protective functions.
Features
? Overload protection
? Current limitation
? Short circuit protection
? Thermal shutdown
? Overvoltage protection (including load dump)
? Fast demagnetization of inductive loads
? Reverse battery protection1)
? Undervoltage and overvoltage shutdown with auto-restart and hysteresis
? Open drain diagnostic output
? Open load detection in ON-state
? CMOS compatible input
? Loss of ground and loss of Vbb protection
? Electrostatic discharge (ESD) protection
Application
? μC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
? All types of resistive, inductive and capacitve loads
? Replaces electromechanical relays, fuses and discrete circuits
產(chǎn)品屬性
- 型號:
BTS410E2E3062A
- 制造商:
Infineon Technologies AG
- 功能描述:
Power Switch Hi Side 1.6A 5-Pin(4+Tab) TO-220AB SMD T/R
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON |
24+ |
N/A |
8000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
Infineon |
23+ |
P-TO220-5 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
Infineon/英飛凌 |
23+ |
PG-TO263-5 |
12700 |
買原裝認準中賽美 |
詢價 | ||
Infineon(英飛凌) |
23+ |
標準封裝 |
7000 |
原廠原裝現(xiàn)貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品 |
詢價 | ||
INFINEON/英飛凌 |
2022+ |
PG-TO263-5 |
48000 |
只做原裝,絕對原裝,假一罰十 |
詢價 | ||
INFINEO |
24+ |
TO263-5 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
Infineon(英飛凌) |
24+ |
TO-263-5 |
7178 |
百分百原裝正品,可原型號開票 |
詢價 | ||
Infineon/英飛凌 |
23+ |
PG-TO263-5 |
25630 |
原裝正品 |
詢價 | ||
Infineon/英飛凌 |
24+ |
PG-TO263-5 |
25000 |
原裝正品,假一賠十! |
詢價 | ||
Infineon(英飛凌) |
22+ |
NA |
7000 |
原廠原裝現(xiàn)貨 |
詢價 |