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BUL128D

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed ·Integratedantiparallelcollector-emitterdiode APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitch-modepowersupplies.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUL128D

HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisd

TGS

Tiger Electronic Co.,Ltd

BUL128D

Silicon NPN Power Transistor

EATURES ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed DESCRIPTION ·Designedforuseinlightingapplicationsandlowcost switch-modepowersupplies.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUL128D

Power Transistors;

ETC

ETC

BUL128D

TO-220 Bipolar Junction Transistors;

ETC

ETC

BUL128D

三極管;

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司

BUL128DB

isc Silicon NPN Power Transistor

DESCRIPTION ?Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ?LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ?VeryHighSwitchingSpeed APPLICATIONS ?Designedforelectronicballastsforfluorescentlighting.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUL128D-B

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUL128DR7

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features NPNtransistor,highvoltagecapability,lowspreadofdynamicparameters,minimumlot-to-lotspreadforReliableoperation,veryhighswitchingspeed. Applications Electronicballastsforfluorescentlighting,fl

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

BUL128DR8

Silicon NPN transistor in a TO-220F Plastic Package.

Descriptions SiliconNPNtransistorinaTO-220FPlasticPackage. Features NPNtransistor,highvoltagecapability,lowspreadofdynamicparameters,minimumlot-to-lotspreadforReliableoperation,veryhighswitchingspeed. Applications Electronicballastsforfluorescentlighting,fl

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

技術(shù)參數(shù)

  • Ic(max)：

    2000

  • BVCBO：

    4000

  • VCEO：

    700

  • BVEBO：

    400

  • hFE(MIN)：

    9

  • hFE(MAX)：

    8

  • VCE：

    40

  • IC：

    5

  • VCE(sat)：

    2000

  • IC(mA)：

    0.5

  • IB(mA)：

    4000

  • fT：

    1000

  • Package：

    TO-220

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
05+
原廠原裝
7051
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
ST
17+
TO-220
6200
詢價
ST
21+
TO-220
12588
原裝正品,自己庫存 假一罰十
 詢價
ST
20+
TO-220
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
ST
22+
TO-220
6000
十年配單,只做原裝
 詢價
ST/意法半導(dǎo)體
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價
KI
25+
TO220
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
ST
23+
SDM/DIP
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
ST
23+
SDM/DIP
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
ST
23+
TO-220
7000
詢價
更多BUL128D供應(yīng)商 更新時間2025-7-30 14:14:00

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