C4D20120A分立半導(dǎo)體產(chǎn)品的二極管-整流器-單規(guī)格書PDF中文資料

C4D20120A屬于分立半導(dǎo)體產(chǎn)品的二極管-整流器-單。由WOLFSPEED, INC.制造生產(chǎn)的C4D20120A二極管 - 整流器 - 單單整流器二極管系列產(chǎn)品可用于讓電流僅沿一個方向流動，并且每個器件封裝都恰好實現(xiàn)該功能的一個實例。其他用途的二極管（包括齊納二極管和可變電容二極管）單獨列在各自的產(chǎn)品系列中，每個器件封裝中包含多個二極管的產(chǎn)品也是如此。

Description

With the performance advantages of a Silicon Carbide (SiC)

Schottky Barrier diode, power electronics systems can expect

to meet higher efficiency standards than Si-based solutions,

while also reaching higher frequencies and power densities.

SiC diodes can be easily paralleled to meet various application

demands, without concern of thermal runaway. In combination

with the reduced cooling requirements and improved thermal

performance of SiC products, SiC diodes are able to provide

lower overall system costs in a variety of diverse applications.

Features

? Low Forward Voltage (VF

) Drop with Positive

Temperature Coefficient

? Zero Reverse Recovery Current / Forward

Recovery Voltage

? Temperature-Independent Switching Behavior

Applications

? Industrial Switched Mode Power Supplies

? Uninterruptible & AUX Power Supplies

? Boost for PFC & DC