CAT24C44VI-T3集成電路（IC）的存儲器規(guī)格書PDF中文資料

CAT24C44VI-T3屬于集成電路（IC）的存儲器。由安森美半導體公司制造生產(chǎn)的CAT24C44VI-T3存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

DESCRIPTION

The CAT24C44 Serial NVRAM is a 256-bit nonvolatile memory organized as 16 words x 16 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile EEPROM array which allows for easy transfer of data from RAM array to EEPROM (STORE) and from EEPROM to RAM (RECALL). STORE operations are completed in 10ms max. and RECALL operations typically within 1.5μs. The CAT24C44 features unlimited RAM write operations either through external RAM writes or internal recalls from EEPROM. Internal false store protection circuitry prohibits STORE operations when VCC is less than 3.5V (typical) ensuring EEPROM data integrity.

FEATURES

■ Single 5V Supply

■ Infinite EEPROM to RAM Recall

■ CMOS and TTL Compatible I/O

■ Low CMOS Power Consumption:

–Active: 3mA Max.

–Standby: 30μA Max.

■ Power Up/Down Protection

■ 10 Year Data Retention

■ JEDEC Standard Pinouts:

–8-lead DIP

–8-lead SOIC

■ 100,000 Program/Erase Cycles (EEPROM)

■ Auto Recall on Power-up

■ Commercial, Industrial and Automotive Temperature Ranges