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CEB75A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■25V,69A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=13mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-263&TO-220package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB75A3

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 25V,69A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-263&TO-220package. RDS(ON)=13mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED75A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 25V,60A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=13mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED75A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,60A,RDS(ON)=9m?@VGS=10V. RDS(ON)=13m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP75A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,69A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=13mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-263&TO-220package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP75A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 25V,69A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-263&TO-220package. RDS(ON)=13mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU75A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,60A,RDS(ON)=9m?@VGS=10V. RDS(ON)=13m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU75A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 25V,60A,RDS(ON)=9mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=13mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU75A3

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM75A3PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE25VoltsCURRENT60Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CEB75A3

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
SR
23+
T0-263
5000
原裝正品,假一罰十
 詢價(jià)
VBsemi
24+
T0-263
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
VBsemi
24+
T0-263
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
CET
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
CET/華瑞
2022+
TO-263
209
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
C
23+
T0-263
6000
原裝正品，支持實(shí)單
 詢價(jià)
SR
21+
TO263
10026
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
VBsemi
23+
T0-263
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
CET/華瑞
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
CET/華瑞
20+
TO-263
209
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
 詢價(jià)
更多CEB75A3供應(yīng)商 更新時(shí)間2025-5-27 15:36:00

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