首頁(yè) >CH7301C-TFIC>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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CH7301CDVITransmitterDevice Features ?DVITransmitterupto165Mpixels/second ?DVIlowjitterPLL ?DVIhotplugdetection ?Supportinggraphicsresolutionsupto1600x1200pixels and1920x1200reducedblanking ?ProvidingRGBoutput ?DACconnectiondetection ?Programmablepowermanagement ?Fullyprogrammable | Chrontel CHRONTEL | Chrontel | ||
singlechipsolutionincludedatriple-channelADC,twoPLLcircuits,oneinternalOnScreenDisplay(OSD),sophisticatedfilterandthemostadvanced Introduction EtronsEL7301isthekeygraphicsprocessingICthatenableliquidCrystalDisplay(LCD)monitoratSVGA,XGAandSXGATFT-LCDresolution.Thissinglechipsolutionincludedatriple-channelADC,twoPLLcircuits,oneinternalOnScreenDisplay(OSD),sophisticatedfilterandthemos | EtronEtron Technology, Inc. 鈺創(chuàng)科技鈺創(chuàng)科技股份有限公司 | Etron | ||
13-Bit,DigitalTemperatureSensor | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
?1?CAccurate,13-Bit,DigitalTemperatureSensor GENERALDESCRIPTION TheADT7301isacompletetemperaturemonitoringsystemavailableinSOT-23andMSOPpackages.Itcontainsabandgaptemperaturesensoranda13-bitADCtomonitoranddigitizethetemperaturereadingtoaresolutionof0.03125°C. FEATURES 13-bittemperature-to-digitalc | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
PowerMOSFET(Vdss=20V,Rds(on)=0.050ohm) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
MOSFET Description TheSOP-8hasbeenmodifiedthroughacustomizedleadframeforenhanced thermalcharacteristicsandmultiple-diecapabilitymakingitidealina varietyofpowerapplications.Withtheseimprovements,multipledevices canbeusedinanapplicationwithdramaticallyreducedboardspa | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
GenerationVTechnology Features VDS(V)=20V RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | UMW | ||
MOSFET Description TheSOP-8hasbeenmodifiedthroughacustomizedleadframeforenhanced thermalcharacteristicsandmultiple-diecapabilitymakingitidealina varietyofpowerapplications.Withtheseimprovements,multipledevices canbeusedinanapplicationwithdramaticallyreducedboardspa | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
DualN-Channel20-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI |
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