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零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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Quadruple2-inputANDGate FEATURES ●QuiescentCurrent=0.5nAtyp/pkg@5V ●NoiseImmunity=45ofVDDtyp ●CapableofDrivingOneLow-powerSchottkyTTLloadOvertheRatedTemperatureRange ●Pin-forPinReplacementsforCD4081BandMC14081BSeries | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
140MHzSAWFilter20MHzBandwidth | SIPATSIPAT Co,Ltd 勝普電子重慶勝普電子有限公司 | SIPAT | ||
140MHzSAWFilter20MHzBandwidth | SIPATSIPAT Co,Ltd 勝普電子重慶勝普電子有限公司 | SIPAT | ||
B-SuffixSeriesCMOSGates B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features ?SupplyVoltageRange=3.0V | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
B-SuffixSeriesCMOSGates B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features ?SupplyVoltageRange=3.0V | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
B-SUFFIXSERIESCMOSGATES | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
B??uffixSeriesCMOSGates | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola |
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