首頁 >CUHS20S30,H3F(T>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FastRecoveryEpitaxialDiode | FUTUREWAFER FutureWafer Tech Co.,Ltd | FUTUREWAFER | ||
FastRecoveryEpitaxialDiode | FUTUREWAFER FutureWafer Tech Co.,Ltd | FUTUREWAFER | ||
20.0AmpereSurfaceMountDualSeriesConnectionUltraFastRecoveryRectifiers Features ※ThinkiSemilatest&maturedprocessFRD/FRED ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerS | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
SCHOTTKYBARRIERRECTIFIERS(20A,30-60V) TheD2PAKPowerrectifieremploystheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artdeviceshavethefollowingfeatures: *LowForwardVoltage. *LowSwitchingnoise. *HighCurrentCapacity *GuaranteeReverseAvalanche. *Guard-RingforStressProtection | MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | ||
SchottkyBarrierRectifiers SCHOTTKYBARRIERRECTIFIERS 20AMPERES35-60VOLTS TheI2PAKPowerrectifieremploystheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artdeviceshavethefollowingfeatures: *LowForwardVoltage. *LowSwitchingnoise. *HighCurrentCapacity | MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | ||
SCHOTTKYBARRIERRECTIFIER VOLTAGERANGE30-45VoltsCURRENT20Amperes FEATURES *PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 *MetalSiliconjunction,majoritycarrierconduction *Lowpowerloss,highefficiency *Highcurrentcapability,lowforwardvoltagedrop | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
SiliconCarbideSchottkyDiode SiliconCarbideSchottkyDiode ?Revolutionarysemiconductormaterial-SiliconCarbide ?Switchingbehaviorbenchmark ?Noreverserecovery ?Notemperatureinfluenceontheswitchingbehavior ?Noforwardrecovery | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SiliconCarbideSchottkyDiodeSwitchingbehaviorbenchmarkNoreverserecovery | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SiliconCarbideSchottkyDiodeSwitchingbehaviorbenchmark | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SiliconCarbideSchottkyDiode SiliconCarbideSchottkyDiode ?Revolutionarysemiconductormaterial-SiliconCarbide ?Switchingbehaviorbenchmark ?Noreverserecovery ?Notemperatureinfluenceontheswitchingbehavior ?Noforwardrecovery | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
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