CY7C1011CV33-10ZC中文資料賽普拉斯數(shù)據手冊PDF規(guī)格書

Functional Description

The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable

(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16).

Features

? Pin equivalent to CY7C1011BV33

? High speed

— tAA = 10 ns

? Low active power

— 360 mW (max.)

? Data Retention at 2.0

? Automatic power-down when deselected

? Independent control of upper and lower bits

? Easy memory expansion with CE and OE features

? Available in Pb-free and non Pb-free 44-pin TSOP II,

44-pin TQFP and non Pb-free 48-ball VFBGA packages