DTD143ES

Marking：D143ES；Package：SPT/SC-72；Digital transistors (built-in resistors)

Features 1)Built-inbiasresistorsenabletheconfiguration ofaninvertercircuitwithoutconnectingexternal inputresistors(seeequivalentcircuit). 2)Thebiasresistorsconsistofthinfilmresistors withcompleteisolationtoallownegativebiasing oftheinput.They

ESDD3Z12

Marking：D12；Package：SOD-323；Plastic-Encapsulate Diodes

DESCRIPTION DesignedtoprotectvoltagesensitiveelectroniccomponentsfromESDandothertransients. Excellentclampingcapability,lowleakage,andfastresponsetimeprovidebestinclassprotectionondesignsthatareexposedtoESD. Thecombinationofsmallsize,highlevelofESDprotect

IDDD10G65C6

Marking：D1065C6；Package：PG-HDSOP-10-1；6th Generation CoolSiC? 650V SiC Schottky Diode

Features ?Bestinclassforwardvoltage(1.25V) ?Bestinclassfigureofmerit(QcxVF) ?Highdv/dtruggedness(150V/ns) Benefits ?Systemefficiencyimprovement ?Systemcostandsizesavingsduetothereducedcoolingrequirements ?Enablinghigherfrequencyandincreasedpowerde

IDDD12G65C6

Marking：D1265C6；Package：PG-HDSOP-10-1；650V SiC Schottky Diode

Features ?Bestinclassforwardvoltage(1.25V) ?Bestinclassfigureofmerit(QcxVF) ?Highdv/dtruggedness(150V/ns) PotentialApplications ?PowerfactorcorrectioninSMPS ?Solarinverter ?Uninterruptiblepowersupply

IDDD16G65C6

Marking：D1665C6；Package：PG-HDSOP-10-1；6th Generation CoolSiC? 650V SiC Schottky Diode

Features ?Bestinclassforwardvoltage(1.25V) ?Bestinclassfigureofmerit(QcxVF) ?Highdv/dtruggedness(150V/ns) Benefits ?Systemefficiencyimprovement ?Systemcostandsizesavingsduetothereducedcoolingrequirements ?Enablinghigherfrequencyandincreasedpowerde

IDH16G65C5

Marking：D1665C5；Package：PG-TO220-2；SiC Silicon Carbide Diode

1Description ThinQ!?Generation5representsInfineonleadingedgetechnologyfortheSiC SchottkyBarrierdiodes.TheInfineonproprietarydiffusionsolderingprocess, alreadyintroducedwithG3isnowcombinedwithanew,morecompactdesignand thin-wafertechnology.Theresultisanewfa

IDH16G65C5

Marking：D1665C5；Package：PG-TO220-2；5t h Generation thinQ!TM 650V SiC Schottky Diode

1Description ThinQ!?Generation5representsInfineonleadingedgetechnologyfortheSiC SchottkyBarrierdiodes.TheInfineonproprietarydiffusionsolderingprocess, alreadyintroducedwithG3isnowcombinedwithanew,morecompactdesignand thin-wafertechnology.Theresultisanewfa

IDK10G120C5

Marking：D1012C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features ?Revolutionarysemiconductormaterial-SiliconCarbide ?Noreverserecoverycurrent/noforwardrecovery ?Temperatureindependentswitchingbehaviour ?Lowforwardvoltageevenathighoperatingtemperature ?Tightforwardvoltagedistribution ?Excellentthermalperformance ?

IDK16G120C5

Marking：D1612C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features ?Revolutionarysemiconductormaterial-SiliconCarbide ?Noreverserecoverycurrent/noforwardrecovery ?Temperatureindependentswitchingbehaviour ?Lowforwardvoltageevenathighoperatingtemperature ?Tightforwardvoltagedistribution ?Excellentthermalperformance ?

IDW100E60

Marking：D100E60；Package：PG-TO-247-3；Fast Switching EmCon Diode

Features: ?600VEmContechnology ?Fastrecovery ?Softswitching ?Lowreverserecoverycharge ?Lowforwardvoltage ?175°Cjunctionoperatingtemperature ?Easyparalleling ?Pb-freeleadplating;RoHScompliant ?CompleteproductspectrumandPSpiceModels: http://www.infineon.com