PTVS54VS1UTR

Marking：D1；Package：SOD123W；High-temperature 400 W Transient Voltage Suppressor

1.1Generaldescription 400WunidirectionalTransientVoltageSuppressor(TVS)inaSOD123Wsmallandflat leadlow-profileSurface-MountedDevice(SMD)plasticpackage,designedfortransient overvoltageprotectioninhigh-temperatureapplications. 1.2Featuresandbenefits 1.3Applications

PTVS54VS1UTR-Q

Marking：D1；Package：SOD123W；High-temperature 400 W Transient Voltage Suppressor

1.Generaldescription 400WunidirectionalTransientVoltageSuppressor(TVS)inaSOD123Wsmallandflatlead low-profileSurface-MountedDevice(SMD)plasticpackage,designedfortransientovervoltage protectioninhigh-temperatureapplications. 2.Featuresandbenefits ?Ratedpeakpulse

PUMD12

Marking：D1；Package：SOT363；NPN/PNP resistor-equipped transistors; R1 = 47 k?, R2 = 47 k?

1.1Generaldescription NPN/PNPdoubleResistor-EquippedTransistors(RET)inSurface-Mounted Device(SMD)plasticpackages. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberPackagePNP/PNP complement NPN/NPN complement Package NXPJEITAconfiguration PE

PUMD12-Q

Marking：D1；Package：TSSOP6；NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ

1.Generaldescription NPN/PNPdoubleResistor-EquippedTransistor(RET)inaverysmallSOT363(SC-88)Surface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reducescomponentcoun

PUMD16

Marking：D1；Package：SC-88；NPN/PNP resistor-equipped transistors; R1 = 22 k?, R2 = 47 k?

Featuresandbenefits ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecost

PUMD16-Q

Marking：D1；Package：TSSOP6；50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 47 kΩ

1.Generaldescription NPN/PNPdoubleResistor-EquippedTransistor(RET)inaverysmallSOT363(SC-88)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PUMH16 PNP/PNPcomplement:PUMB16 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistor

RB520S-40

Marking：D1；Package：SOD-523；Plastic-Encap sulate Diodes

FEATURES Smallsurfacemountingtype LowIR Highreliability

SBRT2M10LP-7

Marking：D1；Package：X1-DFN1411-3；2A TrenchSBR TRENCH SUPER BARRIER RECTIFIER

Features PatentedTrenchSBRtechnologyprovidessuperioravalanche capabilityversusschottkydiodes,ensuringmoreruggedand reliableendapplications. Reducedultra-lowforwardvoltagedrop(VF);Betterefficiency andcooleroperation. Reducedhightemperaturereverseleakage;Increasedr

TDS1421PW.C

Marking：D1；Transient Diverting Suppressor 1-Line, 14V EOS Protection

Description TransientDivertingSuppressors(TDS)aredesigned toprovidehighenergyEOSprotectionwithsuperior clampingandtemperaturecharacteristicswhen comparedtostandardTVSdevices.Thedeviceusesa surgeratedFETasthemainprotectionelement.During anEOSevent,transientv

BAS316

Marking：D1；Package：SOD-323；Switching Diodes Silicon Epitaxial Planar