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UPD41257C-15

262144X1-BITDYNAMICNMOSRAM

Description TheμPD41257isa262,144-wordby1-bitdynamicNMOSRAMdesignedtooperatefromasingle+5-voltpowersupply.Adouble-polylayerN-channelsilicongatefabricatedprocessprovidesforhighstoragecelldensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

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