2SD1286-Z

Marking：DPAK；Package：TO-252；isc Silicon NPN Darlington Power Transistor

DESCRIPTION ?WithTO-252(DPAK)packaging ?VeryhighDCcurrentgain ?Monolithicdarlingtontransistorwithintegrated antiparallelcollector-emitterdiode ?Complementtotype2SB963-Z ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATION

2SD2195

Marking：DP；Package：SOT-89；Power Transistor (100V, 2A)

Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-inresistorbetweenbaseandemitter. 3)Built-indamperdiode. 4)Complementsthe2SB1580/2SB1316.

2SD2195

Marking：DP；Package：SOT-89；Transistors

PowerTransistor(+/-100V/+/-2A)

2SD2195

Marking：DP；Package：SOT-89；Power Transistor (100V , 2A)

Features 1)DarlingtonconnectionforhighDCcurrentgain. 2)Built-inresistorbetweenbaseandemitter. 3)Built-indamperdiode. 4)Complementsthe2SB1580/2SB1316.

4.0SMF70A

Marking：DP；Package：SOD-123；3.3 To 48V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features Glasspassivatedchip 400Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01% TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. MeetAEC-Q101require

6.0SMAJ70CA

Marking：DP；Package：DO-214AC；5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glasspassivatedchip 600Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260°C/10satterminals. RoHScompliant Features

AOD409

Marking：DPAK；Package：TO-252；isc P-Channel MOSFET Transistor

?FEATURES ?WithTO-252(DPAK)packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchin

AOD409G

Marking：DPAK；Package：TO-252；isc P-Channel MOSFET Transistor

?DESCRITION ?Besuitableforsynchronousrectificationforserverand generalpurposeapplications ?FEATURES ?DrainCurrent–ID=-28A@TC=25℃ ?DrainSourceVoltage- :VDSS=-60V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max) ?100avalanchetested ?Minimum

AOD4102

Marking：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=19A@TC=25℃ ?DrainSourceVoltage- :VDSS=30V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=37mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lot

AOD4120

Marking：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=25A@TC=25℃ ?DrainSourceVoltage- :VDSS=20V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lot