首頁 >DRV8215EVM>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SchottkyORingDiode 80AmpSchottkyRectifier ?SchottkyBarrierRectifier ?LowForwardVoltage ?GuardRingprotection ?150°CJunctionTemperature ?VRRM-10to15Volts | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
80AmpSchottkyRectifier | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage. ●ESDProtected. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
DualN-ChannelMOSFET FEATURES ?Halogen-freeOptionAvailable ?TrenchFET?PowerMOSFETs ?100RgTested ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
PowerRectifier,Ultra-FastRecovery,2A,150V Ideallysuitedforhighvoltage,highfrequencyrectification,oras freewheelingandprotectiondiodesinsurfacemountapplications wherecompactsizeandweightarecriticaltothesystem. Features ?SmallCompactSurfaceMountablePackagewithJ?BendLeads ?RectangularPackageforAutom | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
18WBTLx3CHAUDIOPOWERAMPLIFIER | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
18WBTLx3CHAUDIOPOWERAMPLIFIER | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
18WBTL?2CHAudioPowerAmplifier | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
18WBTLx3CHAUDIOPOWERAMPLIFIER | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
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