DRV8262-Q1中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書

1 Features

? AEC-Q100 qualified for automotive applications:

– Temperature grade 1: –40°C to +125°C, TA

? Functional Safety-Capable

– Documentation available to aid functional safety

system design

? 4.5V to 65V (70V abs. max) operating range

? MOSFET ON resistance (HS + LS): 85mΩ

? Maximum output current = 29A

? Configurable control modes

– Single full-bridge, PH/EN, or PWM interface

– Two half-bridges using Independent mode

? 2 Interface options - HW or SPI

? PWM frequency operation up to 100kHz with

automatic dead time assertion

? Configurable slew rate and spread spectrum

clocking for low electromagnetic interference (EMI)

? Integrated current sense (eliminates shunt resistor)

? Proportional load current output on IPROPI

? Die temperature monitoring on IPROPI (SPI only)

? Configurable current regulation

? Protection and diagnostic features with

configurable fault reaction (latched or retry)

– Load diagnostics in both the off-state and onstate

to detect open load and short circuit

– Voltage monitoring on supply (VM)

– Over current protection

– Over temperature warning (SPI only)

– Over temperature protection

– Powered off Braking

– Fault indication on nFAULT pin

? Supports 1.8V, 3.3V, 5V logic inputs

? Low sleep current - 7μA typical at 25°C

? Device family comparison table

2 Applications

? 24V and 48V Automotive Body Systems

? Automotive brushed DC motors, Solenoids

? Door modules , mirror modules, wiper modules

and seat modules

? Trunk lift, Window lift

? Steering column, Sunroof shade

? Electric Vehicles, Truck, Bus and other

Commercial Vehicles

3 Description

The DRV8263-Q1 is a wide-voltage, high-power fully

integrated H-bridge driver for 24V and 48V automotive

applications. Designed in a BiCMOS high-power

process technology node, this device in a power

package offers excellent power handling and thermal

capability while providing compact package size,

ease of layout, EMI control, accurate current sense,

robustness, and diagnostic capability.

The device integrates a N-channel H-bridge, charge

pump, high-side current sensing with regulation,

current proportional output, and protection circuitry.

The integrated sensing uses a current mirror,

removing the need for shunt resistors, saving board

area, and reducing system cost. A low-power sleep

mode is provided to achieve low quiescent current.

The device offers voltage monitoring and load

diagnostics, as well as protection features against

overcurrent and overtemperature. Fault conditions are

indicated on the nFAULT pin. It is available in two

variants: HW interface and SPI interface. The SPI

variant offers more flexibility in device configuration

and fault observability.