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P6SMB150C

Marking:DV;SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導體股份有限公司

PDTC115EM

Marking:DV;Package:SOT883;NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC115EM

Marking:DV;Package:SOT883;NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC115EM

Marking:DV;Package:SOT-883;PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNPresistor-equippedtransistors;R1=100k?,R2=100k? DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Re

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PMEG40T20EP-Q

Marking:DV;Package:CFP5;40 V, 2 A low VF Trench MEGA Schottky barrier rectifier

1.Generaldescription TrenchMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierencapsulatedin aCFP5(SOD128)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Averageforwardcurrent:IF(AV)≤2A ?Reversevoltage:VR≤4

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

SMBJ75CA

Marking:DV;Package:DO-214AA;SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features GlassPassivatedDieConstruction Uni-andBi-DirectionalVersionsAvailable ExcellentClampingCapability FastResponseTime PlasticMaterial:ULFlammability ClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導體股份有限公司

SMBJ85CA

Marking:DV;Package:DO-214AA;SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

FEATURES ?Forsurfacemountedapplicationsinordertooptimizeboardspace ?Typicalmaximumtemperaturecoefficient△VBR=0.1%xVBR@25°Cx△T ?Lowprofilepackage ?Built-instrainrelief ?Glasspassivatedjunction ?Excellentclampingcapability ?RepetitionRate(dutycycle):0.01

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

SMBJ85CA

Marking:DV;Package:DO-214AA;Surface Mount Transient Voltage Suppressors

Features Excellentclampingcapability Lowleakagecurrent Lowcapacitance Highsurgecapability Glasspassivatedchip Epoxyresinpackage Built-instrainrelief Willnotfatigue RoHSCompliant Fastresponsetime: typicallylessthan1.0psfrom0VoltstoVBRmin Applications Teleco

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三陽電子三陽電子有限公司

SMBJ85CA

Marking:DV;Package:DO-214AA;SAMYANG ELECTRONICS

600WattPeakPower Dimension

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三陽電子三陽電子有限公司

SMBJ85CA

Marking:DV;Package:DO-214AA;TRANSIENT VOLTAGE SUPPRESSOR

Features ·Forsurfacemountedapplications inordertooptimizeboardspace ·Lowprofilespace ·Veryfastresponsetime ·Lowinductance ·Excellentclampingcapability ·600Wpeakpulsepowercapability witha10/1000μswaveform ·MeetsMSLlevel1,perJ-STD-020 ·Componentinacco

DAESAN

Daesan Electronics Corp.

詳細參數(shù)

  • 型號:

    DV

  • 制造商:

    Amphenol

  • 功能描述:

    DV 09 G2

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