EM639165TS-6G

8Mega x 16 Synchronous DRAM (SDRAM)

Overview\nThe EM639165 SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally\nconfigured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the\npositive edge of the clock signal, CLK). Read and write accesses to the SDRAM are bur; ? Fastaccess time from clock:5/5.4 ns\n? Fast clock rate: 166/143 MHz\n? Fully synchronous operation\n? Internal pipelined architecture\n? 2M word x 16-bit x 4-bank\n? Programmable Mode registers\n- CAS# Latency: 2, or 3\n- Burst Length: 1, 2, 4, 8, or full page\n- Burst Type: interleaved or linear ;

EM639165TS-6G

8Mega x 16 Synchronous DRAM (SDRAM)

EM639165TS-6LG

8Megax16SynchronousDRAM(SDRAM)

EM639165TS-6G

ETRONTECH
TSOP54

ETRONTECH

EM639165TS-6G

ETRONTEC
TSOP

ETRONTEC