首頁(yè) >FDC6301N_NL>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
DualN-ChannelEnhancementModeMOSFET | TECHPUBLICTECH PUBLIC Electronics co LTD 臺(tái)舟電子臺(tái)舟電子股份有限公司 | TECHPUBLIC | ||
DualN-Channel,DigitalFET GeneralDescription ThesedualN-ChannellogiclevelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thisdevicehasbeendesignedespeci | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DualN-Channel,DigitalFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DualN-ChannelMOSFET ■Features ●VDS(V)=25V ●ID=220mA(VGS=4.5V) ●RDS(ON)6kVHumanBodyModel). | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
TriggeredVacuumGaps TheTriggeredVacuumSparkGapsareidealhigh-voltageswitchesforapplicationswhereawideoperatingvoltagerangeisdesired.ThelowendoftheoperatingvoltagerangeisindependentoftheStaticBreakdownVoltage(SBV).Operatingrangesfrom300voltsto80kilovoltsarepossible.Switching | PerkinElmer PerkinElmer Optoelectronics | PerkinElmer | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTMGTM CORPORATION 勤益投資控股勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTMGTM CORPORATION 勤益投資控股勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
MicroprocessorCOREVoltageRegulatorMulti-PhaseBuckPWMController TheHIP6301multi-phasePWMcontrolICtogetherwithitscompaniongatedrivers,theHIP6601B,HIP6602B,HIP6603BorHIP6604BandexternalMOSFETsprovidesaprecisionvoltageregulationsystemforadvancedmicroprocessors. Features ?Multi-PhasePowerConversion ?PrecisionChannelCurrentS | Intersil Intersil Corporation | Intersil |
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