首頁(yè) >FDS8958A(UMW)>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
DualN&P-ChannelPowerTrench?MOSFETQ1-N-Channel:30V,6.4A,26m廓Q2-P-Channel:-30V,-4.5A,51m廓 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DualN&P-ChannelPowerTrenchMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
Highoutputpower:1.5mW,pigtailtype Laserdiode Highoutputpower:1.5mW,pigtailtype Features ●Highoutputpower:1.5mW ●High-speedresponse:1.25GbpsMax. ●1.3μmFP(Fabry-perot)laser Applications ●Opticalfibercommunications | HAMAMATSUHamamatsu Photonics Co.,Ltd. 濱松光子濱松光子學(xué)株式會(huì)社 | HAMAMATSU | ||
DualN&P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription ThesedualN-andP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperfo | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
75Ω34dBCATVAmplifier50-1003MHz KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W) | QORVOQorvo, Inc 威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司 | QORVO | ||
75Ω34dBCATVAmplifier50-1003MHz KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W) | QORVOQorvo, Inc 威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司 | QORVO | ||
75Ω34dBCATVAmplifier50-1003MHz KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W) | QORVOQorvo, Inc 威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司 | QORVO | ||
75Ω34dBCATVAmplifier50-1003MHz KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W) | QORVOQorvo, Inc 威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司 | QORVO | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) DualEnhancementModeFieldEffectTransistor(NandPChannel) | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
8-bitMicro-controllerwith32KFlashembedded 8-BitMicro-controllerwith32KBflashembedded | SyncMosSyncMOS Technologies,Inc 新茂新茂國(guó)際科技股份有限公司 | SyncMos |
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