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FDS8958B

DualN&P-ChannelPowerTrench?MOSFETQ1-N-Channel:30V,6.4A,26m廓Q2-P-Channel:-30V,-4.5A,51m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KDS8958

DualN&P-ChannelPowerTrenchMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

L8958

Highoutputpower:1.5mW,pigtailtype

Laserdiode Highoutputpower:1.5mW,pigtailtype Features ●Highoutputpower:1.5mW ●High-speedresponse:1.25GbpsMax. ●1.3μmFP(Fabry-perot)laser Applications ●Opticalfibercommunications

HAMAMATSUHamamatsu Photonics Co.,Ltd.

濱松光子濱松光子學(xué)株式會(huì)社

NDS8958

DualN&P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThesedualN-andP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperfo

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

QPB8958

75Ω34dBCATVAmplifier50-1003MHz

KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W)

QORVOQorvo, Inc

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

QPB8958EVB

75Ω34dBCATVAmplifier50-1003MHz

KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W)

QORVOQorvo, Inc

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

QPB8958SB

75Ω34dBCATVAmplifier50-1003MHz

KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W)

QORVOQorvo, Inc

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

QPB8958SR

75Ω34dBCATVAmplifier50-1003MHz

KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W)

QORVOQorvo, Inc

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

SDM8958

DualEnhancementModeFieldEffectTransistor(NandPChannel)

DualEnhancementModeFieldEffectTransistor(NandPChannel)

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

SM8958

8-bitMicro-controllerwith32KFlashembedded

8-BitMicro-controllerwith32KBflashembedded

SyncMosSyncMOS Technologies,Inc

新茂新茂國(guó)際科技股份有限公司

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