FSL234R3中文資料INTERSIL數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠(chǎng)商型號(hào) |
FSL234R3 |
| 功能描述 | 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 文件大小 |
46.03 Kbytes |
| 頁(yè)面數(shù)量 |
8 頁(yè) |
| 生產(chǎn)廠(chǎng)商 | Intersil Corporation |
| 企業(yè)簡(jiǎn)稱(chēng) |
INTERSIL |
| 中文名稱(chēng) | Intersil Corporation官網(wǎng) |
| 原廠(chǎng)標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-7-11 22:30:00 |
| 人工找貨 | FSL234R3價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
FSL234R3規(guī)格書(shū)詳情
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.
Features
? 4A, 250V, rDS(ON) = 0.610?
? Total Dose
?? - Meets Pre-RAD Specifications to 100K RAD (Si)
? Single Event
?? - Safe Operating Area Curve for Single Event Effects
?? - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias
? Dose Rate
?? - Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
?? - Typically Survives 2E12 if Current Limited to IDM
? Photo Current
?? - 4.0nA Per-RAD(Si)/s Typically
? Neutron
?? - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
?? - Usable to 1E14 Neutrons/cm2
產(chǎn)品屬性
- 型號(hào)：
FSL234R3
- 制造商：
INTERSIL
- 制造商全稱(chēng)：
Intersil Corporation
- 功能描述：
4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Fairich |
24+ |
SOP7 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢(xún)價(jià) | ||
F |
25+ |
DIP |
65248 |
百分百原裝現(xiàn)貨 實(shí)單必成 |
詢(xún)價(jià) | ||
ONSemiconductor |
24+ |
7-LSOP |
66800 |
原廠(chǎng)授權(quán)一級(jí)代理,專(zhuān)注汽車(chē)、醫(yī)療、工業(yè)、新能源！ |
詢(xún)價(jià) | ||
Fairich |
1948+ |
SOP7 |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢(xún)價(jià) | ||
ON Sem |
25+ |
25000 |
原廠(chǎng)原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開(kāi)票! |
詢(xún)價(jià) | |||
FAIRCHI |
24+ |
SMD |
12000 |
原廠(chǎng)/代理渠道價(jià)格優(yōu)勢(shì) |
詢(xún)價(jià) | ||
onsemi(安森美) |
2021+ |
LSOP-8 |
499 |
詢(xún)價(jià) | |||
Fairchild/ON |
22+ |
7LSOP |
9000 |
原廠(chǎng)渠道,現(xiàn)貨配單 |
詢(xún)價(jià) | ||
FAIRCHILD |
23+ |
SOP-7 |
28000 |
原裝正品 |
詢(xún)價(jià) | ||
TOKO |
25+23+ |
SMD |
40893 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢(xún)價(jià) |
