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IRF830

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導體

IRF830

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES HigherCurrentRating LowerrDS(ON),LowerCapacitances LowerTotalGateCharge TighterVSD

SUNTAC

Suntac Electronic Corp.

IRF830

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconv

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

IRF830

Highcurrent,highspeedswitching

Description TheIRF830isanewgenerationofhighvoltageN–ChannelenhancementmodepowerMOSFETsandisobtainedthroughanextremeoptimizationlayoutdesign,inadditionaltopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapability,providesuper

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

IRF830

N-channelmosfettransistor

Features ?WithTO-220package ?Simpledriverequirements ?Fastswitching ?VDSS=500V;RDS(ON)≤1.5Ω;ID=4.5A ?1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF830

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

VDSS=500Volts RDS(on)=1.5Ohms ID=4.0Amperes Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplications suchaspowersupplies,PWM

DCCOM

Dc Components

IRF830

N-ChannelPowerMOSFETs,4.5A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF830

PowerFieldEffectTransistor

TMOSPOWERFET4.5AMPERES500VOLTSRDS(on)=1.5? ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds ?LowRDS(on)toMinimizeOn–Loss

ONSEMION Semiconductor

安森美半導體安森美半導體公司

IRF830

Drives1x70WHIDlamp

Overview TheIRPLHID2Areferencedesignkitconsistsofacompleteballastsolutionfora70WHIDlamp.ThedesigncontainsanEMIfilter,lowvoltagepowersupply,activepowerfactorcorrectionandaballastcontrolcircuitusingtheIRS2573D.Thisdemoboardisintendedtohelpwiththeevalua

IRF

International Rectifier

IRF830

HighPowerFactor/LowTHD

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    HIRF830F

  • 制造商：

    HSMC

  • 制造商全稱：

    HSMC

  • 功能描述：

    N-CHANNEL POWER MOSFET

供應商型號品牌批號封裝庫存備注價格
H
TO220AB
22+
6000
十年配單,只做原裝
 詢價
華昕
2048+
TO-220AB
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
H
23+
TO220AB
6000
原裝正品，支持實單
 詢價
H
23+
TO220AB
8400
專注配單,只做原裝進口現(xiàn)貨
 詢價
H
23+
TO220AB
8400
專注配單,只做原裝進口現(xiàn)貨
 詢價
H
25+
TOTO-220AB
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
RF Solutions
21+
Module
13880
公司只售原裝,支持實單
 詢價
RF
20+
模塊
1128
無線通信IC,大量現(xiàn)貨!
 詢價
RF
20+
射頻模塊
155
就找我吧!--邀您體驗愉快問購元件!
 詢價
RF Solutions
20+
N/A
78
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
更多HIRF830F供應商 更新時間2025-5-3 14:01:00

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