HM3-6514B-9中文資料INTERSIL數(shù)據(jù)手冊PDF規(guī)格書

Description

The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation.

On-chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays.

Gated inputs allow lower operating current and also eliminate the need for pull up or pull down resistors. The HM-6514 is a fully static RAM and may be maintained in any state for an indefinite period of time.

Data retention supply voltage and supply current are guaran teed over temperature.

Features

? Low Power Standby . . . . . . . . . . . . . . . . . . . 125μW Max

? Low Power Operation . . . . . . . . . . . . . 35mW/MHz Max

? Data Retention . . . . . . . . . . . . . . . . . . . . . . . at 2.0V Min

? TTL Compatible Input/Output

? Common Data Input/Output

? Three-State Output

? Standard JEDEC Pinout

? Fast Access Time. . . . . . . . . . . . . . . . . . 120/200ns Max

? 18 Pin Package for High Density

? On-Chip Address Register

? Gated Inputs - No Pull Up or Pull Down Resistors Required