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首頁>HN1B01FDW1T1G>芯片詳情
HN1B01FDW1T1G_ONSEMI/安森美半導(dǎo)體_兩極晶體管 - BJT 200mA 60V Dual Complementary得捷芯城商城
- 詳細信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
HN1B01FDW1T1G
- 功能描述:
兩極晶體管 - BJT 200mA 60V Dual Complementary
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
PNP 集電極—基極電壓
- VCBO:
集電極—發(fā)射極最大電壓
- VCEO:
- 40 V 發(fā)射極 - 基極電壓
- VEBO:
- 6 V
- 增益帶寬產(chǎn)品fT:
直流集電極/Base Gain hfe
- Min:
100 A
- 安裝風(fēng)格:
SMD/SMT
- 封裝/箱體:
PowerFLAT 2 x 2
供應(yīng)商
- 企業(yè):
深圳市得捷芯城科技有限公司
- 商鋪:
- 聯(lián)系人:
蔡小姐
- 手機:
19129919757
- 詢價:
- 電話:
0755-82538371 83062789
- 地址:
深圳市福田區(qū)福田街道福虹路9號世貿(mào)廣場A座5層
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