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HZM6.8MWA

SiliconPlanarZenerDiodeforSurgeAbsorb

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HZM6.8MWA

SiliconPlanarZenerDiodeforSurgeAbsorb

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HZM6.8N

SiliconEpitaxialPlanarZenerDiodeforStabilizer

HitachiHitachi Semiconductor

日立日立公司

HZM6.8N

SiliconEpitaxialPlanarZenerDiodeforStabilizer

Features ?Widespectrumfrom1.9Vthrough38Vofzenervoltageprovideflexibleapplication. ?MPAKPackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HZM6.8N

SiliconEpitaxialPlanarZenerDiodeforStabilizer

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HZM6.8N

SiliconEpitaxialPlanarZenerDiodeforStabilizer

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HZM6.8N

SiliconEpitaxialPlanarZenerDiodeforStabilizer

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HZM6.8NB

SiliconEpitaxialPlanarZenerDiodeforStabilizer

Features ?Widespectrumfrom1.9Vthrough38Vofzenervoltageprovideflexibleapplication. ?MPAKPackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HZM6.8NB

SiliconEpitaxialPlanarZenerDiodeforStabilizer

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HZM6.8ZMFA

SiliconPlanarZenerDiodeforSurgeAbsorb

Features ?HZM6.8ZMFAhasfourdevicesinamonolithic,andcanabsorbsurge. ?Lowcapacitance(C=25pFmax)andcanprotectESDofsignalline. ?MPAK-5Packageissuitableforhighdensitysurfacemountingandhighspeedassembly.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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