首頁(yè) >HZM6.8Z4MFTATR-E>規(guī)格書列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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SiliconPlanarZenerDiodeforSurgeAbsorb | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
HZN6.8Z4MFA | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforSurgeAbsorption Features ?RKZ6.8Z4KTcanabsorbingsurgewithfourdevicesinonechipconfiguration. ?Lowcapacitance(C=4.0pFTyp)enableprotectingsignallinefromESD. ?VSON-5Packageissuitableforhighdensitysurfacemounting. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforSurgeAbsorption Features ?RKZ6.8Z4KTcanabsorbingsurgewithfourdevicesinonechipconfiguration. ?Lowcapacitance(C=4.0pFTyp)enableprotectingsignallinefromESD. ?VSON-5Packageissuitableforhighdensitysurfacemounting. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforSurgeAbsorption Features ?RKZ6.8Z4KTcanabsorbingsurgewithfourdevicesinonechipconfiguration. ?Lowcapacitance(C=4.0pFTyp)enableprotectingsignallinefromESD. ?VSON-5Packageissuitableforhighdensitysurfacemounting. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforSurgeAbsorption Features ?RKZ6.8Z4MFAKThasfourdevicesinamonolithic,andcanabsorbsurge. ?Lowcapacitance(C=4.0pFTyp)andcanprotectESDofsignalline. ?VSON-5Packageissuitableforhighdensitysurfacemounting. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
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