首頁(yè) >IF.IPD09N03LA>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
OptiMOS2Power-Transistor Type:IPB09N03LAG Package:PG-TO263-3-2 Marking:09N03LA ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDECfortargetapplications ?N-channel-Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthe | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel-Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?175°Coperatingtemperature ?dv/dtrated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel-Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?175°Coperatingtemperature ?dv/dtrated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel-Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?175°Coperatingtemperature ?dv/dtrated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOSBuckconverterseries | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor Features ?Idealforhigh-frequencydc/dcconverters ?QualifiedaccordingtoJEDEC1)fortargetapplication ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
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