首頁 >IF.SPP08N80C3>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-ChannelMOSFETTransistor ?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.65? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistorFeaturesExtremedv/dtratedHighpeakcurrentcapability | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDECfortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor ?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.65? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.65? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
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