IPP65R190CFD

N-Channel MOSFET Transistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf

IPP65R190CFD

650V CoolMOS C6 CFD POWER Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic

IPP65R190CFD

絲印：65F6190；Package：PG-TO220；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic

IPP65R190CFD

500V-900V CoolMOS? N-Channel Power MOSFET

Replacement for 650V CoolMOS? CFD2?is 600V CoolMOS? CFD7\n 650V CoolMOS? CFD2 is Infineon's second generation of market leading high voltage CoolMOS? MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation ; ? 650V technology with integrated fast body diode\n? Limited voltage overshoot during hard commutation\n? Significant Qg reduction compared to 600V CFD technology\n? Tighter RDS(on) max to RDS(on) typ window\n? Easy to design-in\n? Lower price compared to 600V CFD technology\n\n優(yōu)勢(shì):\n? Low switching ;

IPP65R190CFD7

絲?。?a target="_blank" title="Marking" href="/65r190f7/marking.html">65R190F7；Package：PG-TO220-3；650V CoolMOSa CFD7 SJ Power Device

Features ?Ultra-fastbodydiode ?650Vbreakdownvoltage ?Best-in-classRDS(on) ?Reducedswitchinglosses ?LowRDS(on)dependencyovertemperature

IPP65R190CFD7A

絲?。?a target="_blank" title="Marking" href="/65a190f7/marking.html">65A190F7；Package：PG-TO220-3；650V CoolMOSa CFD7A SJ Power Device

Features ?Latest650Vautomotivequalifiedtechnologywithintegratedfastbody diodeonthemarketfeaturingultralowQrr ?LowestFOMRDS(on)*QgandRDS(on)*Eoss ?100avalanchetested ?Best-in-classRDS(on)inSMDandTHDpackages

IPP65R190CFD7A

650V CoolMOS? N 溝道汽車(chē)級(jí)SJ 功率 MOSFET CFD7A

\n優(yōu)勢(shì):\n? 在滿(mǎn)足汽車(chē)壽命要求方面具有行業(yè)最高可靠性\n? 實(shí)現(xiàn)更高功率密度設(shè)計(jì)\n? 可擴(kuò)展設(shè)計(jì)用于 PFC 和 DC-DC 級(jí)\n? 提供豐富的產(chǎn)品組合\n;

IPP65R190CFDA

20V-650V汽車(chē)級(jí)MOSFET

650V CoolMOS? CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS? power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS? CFDA series provide; ? First 650V automotive qualified technology with integrated fast body diode on the market\n? Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n? Low gate charge value Q g\n? Low Q rr at repetitive commutation on body diode & low Q oss\n? Reduced turn on and turn of ;

IPP65R190CFDA

Metal Oxide Semiconductor Field Effect Transistor