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IRF1010EPBF規(guī)格書詳情
Description
Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
產(chǎn)品屬性
- 型號：
IRF1010EPBF
- 功能描述：
MOSFET MOSFT 60V 81A 12mOhm 86.6nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
23+ |
TO-220 |
35000 |
專注原裝正品現(xiàn)貨特價中量大可定 |
詢價 | |||
IR |
23+ |
TO-220 |
22000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
INFINEON |
23+ |
TO220 |
8000 |
原裝正品現(xiàn)貨 |
詢價 | ||
INFINEON |
25+ |
SMD |
918000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
TO-220 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 | ||
IR(國際整流器) |
24+ |
N/A |
24548 |
原廠可訂貨,技術(shù)支持,直接渠道。可簽保供合同 |
詢價 | ||
IR |
21+ |
TO-220 |
10000 |
只做原裝,質(zhì)量保證 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-220 |
33 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-220-3 |
8750 |
只做原裝/假一賠十/安心咨詢 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO-220 |
88000 |
正規(guī)渠道,只有原裝! |
詢價 |
