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IRF1405ZSPBF規(guī)格書詳情
VDSS = 55V
RDS(on) = 4.9m?
ID = 75A
Description
Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產品屬性
- 型號：
IRF1405ZSPBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
95 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
11+ |
TO263 |
289 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
TO263 |
53650 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
IR |
22+ |
TO263 |
12245 |
現貨,原廠原裝假一罰十! |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
11+ |
TO-263 |
289 |
優(yōu)勢 |
詢價 | ||
IR |
21+ |
TO-263 |
10000 |
原裝現貨假一罰十 |
詢價 | ||
Infineon(英飛凌) |
24+ |
TO-263 |
7793 |
支持大陸交貨,美金交易。原裝現貨庫存。 |
詢價 | ||
IR |
2022+ |
TO-263 |
30000 |
進口原裝現貨供應,原裝 假一罰十 |
詢價 | ||
Infineon Technologies |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原廠渠道,現貨配單 |
詢價 |
