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IRF3808L

AUTOMOTIVE MOSFET

Description DesignedspecificallyforAutomotiveapplications,thisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemper

IRF

International Rectifier

IRF3808L

Isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3808LPBF

Advanced Process Technology

Description ThisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,lowRθJC,fastswitchingspeedandimproved

IRF

International Rectifier

IRF3808LPBF

Advanced Process Technology

IRF

International Rectifier

IRF3808PBF

HEXFETPowerMOSFET

Description DesignedspecificallyforAutomotiveapplications,thisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtem

IRF

International Rectifier

IRF3808S

AUTOMOTIVEMOSFET

Description DesignedspecificallyforAutomotiveapplications,thisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemper

IRF

International Rectifier

IRF3808S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3808SLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF3808SPBF

AUTOMOTIVEMOSFET

Description ThisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,lowRθJC,fastswitchingspeedandimproved

IRF

International Rectifier

IRF3808SPBF

AdvancedProcessTechnology

Description ThisAdvancedPlanarStripeHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,lowRθJC,fastswitchingspeedandimproved

IRF

International Rectifier

詳細參數(shù)

  • 型號:

    IRF3808L

  • 制造商:

    IRF

  • 制造商全稱:

    International Rectifier

  • 功能描述:

    AUTOMOTIVE MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
2015+
TO-262
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
詢價
IR
24+
TO-262
8866
詢價
IR
2016+
TO-262
6528
房間原裝進口現(xiàn)貨假一賠十
詢價
IR
05+
原廠原裝
1101
只做全新原裝真實現(xiàn)貨供應(yīng)
詢價
IR
23+
TO-262
35890
詢價
IR
23+
TO-262
7600
全新原裝現(xiàn)貨
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IR
23+
TO-262
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
IR
21+
TO-262
10000
原裝現(xiàn)貨假一罰十
詢價
IR
22+
TO-262
8900
英瑞芯只做原裝正品!!!
詢價
更多IRF3808L供應(yīng)商 更新時間2025-5-29 11:03:00