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IRF640

N-channel TrenchMOS transistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

IRF640

N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.150? ■EXTREMELYHIGHdV/dtCAPABILITY ■VERYLOW

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRF640

N-Channel Power MOSFETs, 18A, 150-200V

N-ChannelPowerMOSFETs,18A,150-200V

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF640

18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF640

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF640

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwithbestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredallcommercial-industrialapplicationsatpowerdissipat

IRF

International Rectifier

IRF640

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導體

IRF640

isc N-Channel MOSFET Transistor

DESCRIPTION ?DrainCurrent–ID=18A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ?FastSwitchingSpeed ?LowDriveRequirement APPLICATIONS ?Designedforlowvoltage,highspeedpowerswitching applicationssuch

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF640

N-Channel Enhancement Mode POWER MOSFET

Features: *SuperHighDenseCellDesignForLowRDS(ON) RDS(ON)

WEITRON

Weitron Technology

IRF640

POWERTR MOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆SiliconGateforFastSwitchingSpeeds ◆LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevated Temp

SUNTAC

Suntac Electronic Corp.

技術參數(shù)

  • Package：

    TO-220AB

  • Ch：

    N

  • VDS (V)：

    200

  • VGS (V)：

    20

  • RDS(on)@10V (?)：

    0.18

  • Qg @10V (nC)：

    70

  • Qgs (nC)：

    13

  • Qgd (nC)：

    39

  • ID Max. (A)：

    18

  • PD Max. (W)：

    125

  • VGS(th) Min. (V)：

    2

供應商型號品牌批號封裝庫存備注價格
2015+
200
公司現(xiàn)貨庫存
 詢價
FAIRCHILD
TO-262
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
IR
24+
3600
TO-220
 詢價
IR
24+
TO-220
2000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
IR
23+
TO-220
32078
10年以上分銷商,原裝進口件,服務型企業(yè)
 詢價
IOR
24+
TO-220
4000
原裝原廠代理 可免費送樣品
 詢價
IR(國際整流器)
2023+
N/A
4550
全新原裝正品
 詢價
IR
24+
PTO-220
66800
原廠授權一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力！
 詢價
IR
24+
TO 220
160871
明嘉萊只做原裝正品現(xiàn)貨
 詢價
VISH
2405+
TO-220
4475
只做原裝正品渠道訂貨
 詢價
更多IRF640供應商 更新時間2025-7-27 16:01:00

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