IRF6607中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6607規(guī)格書詳情
Description
The IRF6607 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? High Cdv/dt Immunity
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6607
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
2885 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
25+ |
SMD |
54648 |
百分百原裝現(xiàn)貨 實單必成 歡迎詢價 |
詢價 | ||
IR |
24+ |
SMD |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
20+ |
SMD |
32970 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IOR |
0623+ |
QFN |
4800 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
23+ |
DirectFETMT |
19526 |
詢價 | |||
IOR |
23+ |
QFN |
28000 |
原裝正品 |
詢價 | ||
21+ |
QFN |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | |||
IR |
25+23+ |
QFN |
18980 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
22+ |
QFN |
8000 |
原裝正品支持實單 |
詢價 |
