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IRF7379PBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
● Generation V Technology
● Ultra Low On-Resistance
● Complimentary Half Bridge
● Surface Mount
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF7379PBF
- 功能描述：
MOSFET 30V DUAL N/P CH 20V VGS MAX
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
5445 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
24+ |
SO-8 |
8000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR |
05+ |
SO-8 |
5445 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
23+ |
65480 |
詢價 | ||||
IR |
05+ |
SO-8 |
1238 |
只做原裝只有原裝 |
詢價 | ||
INFINEON/IR |
2023+ |
SOP-8 |
3172 |
一級代理優(yōu)勢現(xiàn)貨,全新正品直營店 |
詢價 | ||
ir |
23+ |
NA |
2196 |
專做原裝正品,假一罰百! |
詢價 | ||
IR |
24+ |
SO-8 |
9000 |
只做原裝，歡迎詢價，量大價優(yōu) |
詢價 | ||
ir |
24+ |
500000 |
行業(yè)低價,代理渠道 |
詢價 | |||
IR |
17+ |
SO-8 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 |
