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IRG4PH50

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=1200V,Vce(on)typ.=2.78V,@Vge=15V,Ic=24A)

Features ?UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode ?NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations ?IGBTco-packagedwithHEXFREDTMultrafast, ult

IRF

International Rectifier

IRG4PH50K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=1200V,Vce(on)typ.=2.77V,@Vge=15V,Ic=24A)

INSULATEDGATEBIPOLARTRANSISTOR Features ●Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,VCC=720V,TJ=125°C,VGE=15V ●Combineslowconductionlosseswithhighswitchingspeed ●Latestgenerationdesignprovidestighterparameterdistributionandhigherefficien

IRF

International Rectifier

IRG4PH50KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=1200V,Vce(on)typ.=2.77V,@Vge=15V,Ic=24A)

IRF

International Rectifier

IRG4PH50KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PH50KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PH50KPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PH50KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,VCC=720V,TJ=125°C,VGE=15V Combineslowconductionlosseswithhighswitchingspeed ?Latestgenerationdesignprovidestighter parameterdistributionandhigherefficiencythan previousgeneratio

IRF

International Rectifier

IRG4PH50S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=1200V,Vce(on)typ.=1.47V,@Vge=15V,Ic=33A)

IRF

International Rectifier

IRG4PH50S-EPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PH50S-EPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

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