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IRFSL41N15D

Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFSL41N15D

HEXFET Power MOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFSL41N15DPBF

HEXFET Power MOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRF

International Rectifier

IRFSL41N15DPbF

High frequency DC-DC converters

Benefits ●LowGate-to-DrainChargetoReduce ??SwitchingLosses ●FullyCharacterizedCapacitanceIncluding ??EffectiveCOSStoSimplifyDesign,(SeeApp. ??NoteAN1001) ●FullyCharacterizedAvalancheVoltage ??andCurrent ●Lead-Free Applications ●HighfrequencyDC-DCconverters

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

FB41N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.045ohm,Id=41A)

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IIRFB41N15D

N-ChannelMOSFETTransistor

?DESCRITION ?HighfrequencyDC-DCconverters ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤45m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFB41N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.045ohm,Id=41A)

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB41N15D

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB41N15D

N-ChannelMOSFETTransistor

?DESCRITION ?HighfrequencyDC-DCconverters ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤45m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFB41N15DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

詳細參數

  • 型號：

    IRFSL41N15D

  • 功能描述：

    MOSFET N-CH 150V 41A TO-262

  • RoHS：

    否

  • 類別：

    分離式半導體產品 >> FET - 單

  • 系列：

    HEXFET®

  • 標準包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應商設備封裝：

    TO-220FP

  • 包裝：

    管件

供應商型號品牌批號封裝庫存備注價格
IR
2015+
TO-262
12500
全新原裝,現貨庫存長期供應
 詢價
IR
05+
原廠原裝
15201
只做全新原裝真實現貨供應
 詢價
IR
23+
TO-262
7600
全新原裝現貨
 詢價
IR
24+
TO-262
8866
詢價
I原裝
23+
TO262直插
5000
原裝正品,假一罰十
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-262-3
11846
一級代理商現貨批發(fā),原裝正品,假一罰十
 詢價
IR
23+
TO-262
10000
專做原裝正品,假一罰百!
 詢價
IR
2447
TO-262
100500
一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期排單到貨
 詢價
INFINEON
1503+
TO-262
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多IRFSL41N15D供應商 更新時間2025-5-29 9:04:00

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