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IRFU9120

5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs

TheseadvancedpowerMOSFETsaredesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching

Intersil

Intersil Corporation

Intersil

IRFU9120

Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-5.6A)

DESCRIPTION ThirdGenerationHEXFETsfromInternatioalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9120) ?StraightLead

IRF

International Rectifier

IRF

IRFU9120

Power MOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

Vishay

IRFU9120

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9120

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9120

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9120

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9120,SiHFR9120) ?Straightlead(IRFU9120,SiHFU9120) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

Vishay

IRFU9120

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-5.6A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISC

IRFU9120

Power MOSFET

Dynamic dV/dt rating\nRepetitive avalanche rated\nSurface-mount (IRFR9120, SiHFR9120);

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

Vishay

IRFU9120

Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-5.6A)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

技術(shù)參數(shù)

  • VDS?max：

    -100.0V

  • RDS (on)(@10V)?max：

    480.0m?

  • RDS (on)?max：

    480.0m?

  • Polarity?：

    P

  • ID ?max：

    -6.5A

  • ID (@ TC=25°C)?max：

    -6.5A

  • ID (@ TC=100°C)?max：

    -4.1A

  • Ptot?max：

    39.0W

  • QG?：

    18.0nC?

  • RthJC?max：

    3.2K/W

  • Mounting?：

    THT

  • VGS?max：

    20.0V

  • Qgd?：

    10.0nC?

  • Tj?max：

    150.0°C

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VISHAY/威世
25+
TO252
20300
VISHAY/威世原裝特價(jià)IRFU9120即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
 詢價(jià)
IR
24+
TO-252
5000
只做原廠渠道 可追溯貨源
 詢價(jià)
IR
24+
TO 251
160919
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
IR
24+
TO-252
501018
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
23+
TO-252
35890
詢價(jià)
IR
05+
TO-251
12000
原裝進(jìn)口
 詢價(jià)
IR
24+
原廠封裝
3525
原裝現(xiàn)貨假一罰十
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
23+
TO-251
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
更多IRFU9120供應(yīng)商 更新時(shí)間2025-8-1 14:13:00

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