IS61NLF25618A-6.5B3中文資料北京矽成數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabricated with ISSIs advanced CMOS technology.

FEATURES

? 100 percent bus utilization

? No wait cycles between Read and Write

? Internal self-timed write cycle

? Individual Byte Write Control

? Single Read/Write control pin

? Clock controlled, registered address, data and control

? Interleaved or linear burst sequence control using MODE input

? Three chip enables for simple depth expansion and address pipelining

? Power Down mode

? Common data inputs and data outputs

? CKE pin to enable clock and suspend operation

? JEDEC 100-pin TQFP, 119-ball PBGA, and 165-ball PBGA packages

? Power supply: NVF: VDD 2.5V (± 5), VDDQ 2.5V (± 5) NLF: VDD 3.3V (± 5), VDDQ 3.3V/2.5V (± 5)

? Industrial temperature available

? Lead-free available