DMMT3904WQ-7-F

Marking：K4A；Package：SOT363；40V MATCHED PAIR NPN SMALL SIGNAL TRANSISTOR IN SOT363

Features ?BVCEO>40V ?IC=200mAHighCollectorCurrent ?PairofNPNTransistorsthatareIntrinsicallyMatched(Note1) ?2MatchingonCurrentGain(hFE) ?2mVMatchingonBase-EmitterVoltage(VBE) ?FullyInternallyIsolatedinaSmallSurfaceMountPackage ?TotallyLead-Free&Ful

DTC1D3R

Marking：K4B；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

IKN04N60RC2

Marking：K4DRC2；Package：PG-SOT223-3；600 V Reverse Conducting Drive 2 offering cost effective IGBT with monolithically integrated diode

Features ?VCE=600V ?IC=4A ?Verytightparameterdistribution ?Operatingrangeof1to20kHz ?Maximumjunctiontemperature150°C ?Shortcircuitcapabilityof3μs ?Humidityrobustdesign ?Pb-freeleadplating;RoHScompliant ?CompleteproductspectrumandPSpiceModels:htt

IKW40N120CH7

Marking：K40MCH7；Package：PG-TO247-3-STD-NN2.5；High speed 1200 V TRENCHSTOP? IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features ?VCE=1200V ?IC=40A ?MaximumjunctiontemperatureTvjmax=175°C ?Best-in-classhighspeedIGBTco-packedwithfullratedcurrent,lowQrrandsoft-commutating highspeeddiode ?LowsaturationvoltageVCEsat=1.7VatTvj=25°C ?Optimizedforhighefficiencyinhighsp

IKW40N120H3

Marking：K40H1203；Package：PG-TO247-3；1200V high speed switching series third generation

Features: TRENCHSTOPTMtechnologyoffering ?verylowVCEsat ?lowEMI ?Verysoft,fastrecoveryanti-paralleldiode ?maximumjunctiontemperature175°C ?qualifiedaccordingtoJEDECfortargetapplications ?Pb-freeleadplating;RoHScompliant ?completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt

IKWH40N65EH7

Marking：K40EEH7；Package：PG-TO247-3-STD-NN4.8；High speed and low saturation voltage 650 V TRENCHSTOP? IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features ?VCE=650V ?IC=40A ?Lowswitchinglosses ?Verylowcollector-emittersaturationvoltageVCEsat ?Verysoft,fastrecoveryantiparalleldiode ?Smoothswitchingbehavior ?Humidityrobustness ?Optimizedforhardswitching,two-andthree-leveltopologies ?Completeprodu

IKZA40N120CH7

Marking：K40MCH7；Package：PG-TO247-4-STD-NT3.7；High speed 1200 V TRENCHSTOP? IGBT 7 Technology

Highspeed1200VTRENCHSTOP?IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features ?VCE=1200V ?IC=40A ?MaximumjunctiontemperatureTvjmax=175°C ?Best-in-classhighspeedIGBTco-packedw

IKZA40N120CS7

Marking：K40MCS7；Package：PG-TO247-4-STD-NT3.7；Short circuit rugged 1200 V TRENCHSTOP? IGBT 7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features ?VCE=1200V ?IC=40A ?IGBTco-packedwithfullcurrent,softandlowQrrdiode ?LowsaturationvoltageVCEsat=2.0VatTvj=175°C ?Optimizedforhardswitchingtopologies(2-Linverter,3-LNPCT-type,...) ?Shortcircuitruggedness8μs ?Widerangeofdv/dtcontrolla

IKZA40N65EH7

Marking：K40EEH7；Package：PG-TO247-4-STD-NT3.7；High speed and low saturation voltage 650 V TRENCHSTOP? IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features ?VCE=650V ?IC=40A ?Lowswitchinglosses ?Verylowcollector-emittersaturationvoltageVCEsat ?Verysoft,fastrecoveryantiparalleldiode ?Smoothswitchingbehavior ?Humidityrobustness ?Optimizedforhardswitching,two-andthree-leveltopologies ?Completeprodu

KMST5551

Marking：K4N；Package：SOT-323；NPN Transistors

■Features ●SmallSurfaceMountPackage ●IdealforMediumPowerAmplificationandSwitching ●ComplementarytoMMST5401