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K4B4G0846B-MCH9中文資料三星數(shù)據(jù)手冊PDF規(guī)格書
K4B4G0846B-MCH9規(guī)格書詳情
Key Features
? JEDEC standard 1.5V ± 0.075V Power Supply
? VDDQ = 1.5V ± 0.075V
? 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,
667MHz fCK for 1333Mb/sec/pin
? 8 Banks
? Posted CAS
? Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10
? Programmable Additive Latency: 0, CL-2 or CL-1 clock
? Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6
(DDR3-1066) and 7 (DDR3-1333)
? 8-bit pre-fetch
? Burst Length: 8 (Interleave without any limit, sequential with starting
address “000” only), 4 with tCCD = 4 which does not allow seamless
read or write [either On the fly using A12 or MRS]
? Bi-directional Differential Data-Strobe
? Internal(self) calibration : Internal self calibration through ZQ pin
(RZQ : 240 ohm ± 1)
? On Die Termination using ODT pin
? Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at
85°C < TCASE < 95 °C
? Asynchronous Reset
? Package : 78 balls FBGA - x4/x8
? All of Lead-Free products are compliant for RoHS
? All of products are Halogen-free
產(chǎn)品屬性
- 型號:
K4B4G0846B-MCH9
- 制造商:
SAMSUNG
- 制造商全稱:
Samsung semiconductor
- 功能描述:
DDP 4Gb B-die DDR3 SDRAM Specification
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
2016+ |
BGA |
3360 |
只做原裝,假一罰十,公司優(yōu)勢內(nèi)存型號! |
詢價 | ||
SAMSUNG/三星 |
24+ |
FBGA78 |
11280 |
原裝現(xiàn)貨 |
詢價 | ||
SAMSUNG |
16+ |
0 |
4000 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | ||
SAMSUNG/三星 |
23+ |
FBGA |
89630 |
當天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
SAMSUNG/三星 |
24+ |
FBGA |
21574 |
鄭重承諾只做原裝進口現(xiàn)貨 |
詢價 | ||
SEC/上優(yōu) |
24+ |
NA/ |
3273 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
SAMSUNG/三星 |
24+ |
BGA |
30000 |
房間原裝現(xiàn)貨特價熱賣,有單詳談 |
詢價 | ||
SAMSUNG/三星 |
1950+ |
FBGA |
4856 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
SAMSUNG/三星 |
25+ |
BGA |
54815 |
百分百原裝現(xiàn)貨,實單必成,歡迎詢價 |
詢價 | ||
SAMSUNG |
25+23+ |
FBGA |
12519 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 |