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MTZJ3.3B

AxialLeadZenerDiodes

Features: *Highreliability *Verysharpreversecharacteristic *Lowreversecurrentlevel Applications: *VoltageStabilization MechanicalData: *Case:DO-34GlassCase *Weight:Approx0.09gram

WEITRON

Weitron Technology

MTZJ3.3C

MTZJSERIESZENERDIODES

MTZJSERIESZENERDIODES

LRCLeshan Radio Company

樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司

MTZJ3.3C

AxialLeadZenerDiodes

Features: *Highreliability *Verysharpreversecharacteristic *Lowreversecurrentlevel Applications: *VoltageStabilization MechanicalData: *Case:DO-34GlassCase *Weight:Approx0.09gram

WEITRON

Weitron Technology

MTZJ3.3D

AxialLeadZenerDiodes

Features: *Highreliability *Verysharpreversecharacteristic *Lowreversecurrentlevel Applications: *VoltageStabilization MechanicalData: *Case:DO-34GlassCase *Weight:Approx0.09gram

WEITRON

Weitron Technology

MTZJ3.3D

MTZJSERIESZENERDIODES

MTZJSERIESZENERDIODES

LRCLeshan Radio Company

樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司

NNCD3.3A

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES400mWTYPE

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(400mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV. FEATURES

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD3.3B

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES500mWTYPE

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(500mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV. FEATURES

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD3.3C

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES150mWTYPE

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(150mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD3.3D

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES200mWTYPE

ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(200mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NNCD3.3DA

ELECTROSTATICDISCHARGENOISECLIPPINGDIODE2-PINSUPERMINIMOLD

ELECTROSTATICDISCHARGENOISECLIPPINGDIODE 2-PINSUPERMINIMOLD DESCRIPTION TheseproductsarethediodedevelopedforESD(ElectrostaticDischarge)noiseprotection.BasedontheIEC61000-4-2testonelectromagneticinterference(EMI),thediodeassuresanendurance,thusmakingits

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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SAMSUNG
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DIODES(美臺(tái))
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SMD20164P
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Pericom
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66
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更多KM-3.3V供應(yīng)商 更新時(shí)間2025-6-29 11:10:00

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