首頁(yè) >KPESD5V0S2BT>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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ProtectionagainsthighsurgecurrentsinultrasmallDFN1010D-3package | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
Lowcapacitancebi-directionaldoubleESDprotectiondiodeinSOT23package Generaldescription Lowcapacitancebi-directionaldoubleESDprotectiondiodeinthesmallSOT23plasticpackagedesignedtoprotect2datalinesfromthedamagecausedbyElectroStaticDischarge(ESD)andothertransients. Features ■Bi-directionalESDprotectionof2lines ■Low | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
LowcapacitancebidirectionaldoubleESDprotectiondiode 1.Generaldescription LowcapacitancebidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodeinasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackagedesignedtoprotecttwodata linesfromthedamagecausedbyESDandothertransients. 2.Featuresandbenefits ? | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
300Wpeakpulsepower(tp=8/20μs) Features 300Wpeakpulsepower(tp=8/20μs) Bidirectionalandunidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent Lowcapacitance(Cj=120pFtyp.) Protectiontwodatalines IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EF | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | UMW | ||
LowcapacitancebidirectionaldoubleESDprotectiondiode 1.Generaldescription LowcapacitancebidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodeinasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage,designedtoprotecttwodata linesfromthedamagecausedbyESDandothertransients. 2.Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
LowVCEsat(BISS)transistors | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
DoubleESDprotectiondiodesinSOT23package DESCRIPTION UnidirectionaldoubleESDprotectiondiodesincommoncathodeconfigurationintheSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesagainstdamagefromElectroStaticDischarge(ESD)andothertransients. FEATURES ?UnidirectionalESDprotectionofupt | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
DoubleESDprotectiondiodesinSOT23package FEATURES ·UnidirectionalESDprotectionofuptotwolines ·Common-cathodeconfiguration ·Max.peakpulsepower:Ppp=330Wattp=8/20ms ·Lowclampingvoltage:V(CL)R=20VatIpp=18A ·Ultra-lowreverseleakagecurrent:IRM30kV ·IEC61000-4-2;lev | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
DoubleESDprotectiondiodeinSOT23package 1.Generaldescription UnidirectionaldoubleESDprotectiondiodeincommoncathodeconfigurationinasmallSOT23 Surface-MountedDevice(SMD)plasticpackage,designedtoprotectuptotwodatalinesagainst damagefromElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbene | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
DoubleESDprotectiondiodeinSOT23package 1.Generaldescription UnidirectionaldoubleESDprotectiondiodeincommoncathodeconfigurationinasmallSOT23 Surface-MountedDevice(SMD)plasticpackage,designedtoprotectuptotwodatalinesagainst damagefromElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbe | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA |
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