KV210

Power Wirewound Ceramic Resistors, vertical

KV2101

SILICON HYPERABRUPT TUNING VARACTOR

SILICONHYPERABRUPTTUNINGVARACTOR

KV2101

VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction

DESCRIPTION ThesefamiliesofhyperabruptjunctionRFvaractordiodesfeaturecomputercontrolledgrownjunctionepitaxywhichprovidesextraordinaryconsistencyandthehighestQavailableina22Volthyperabruptvaractor.Theseseriesgivethedesignerafullcapacitancerangeof10to500pF

KV2101

Varactors (Packaged and Die form);

These families of hyperabrupt junction RF varactor diodes feature computer controlled grown junction epitaxy which provides extraordinary consistency and the highest Q available in a 22 Volt hyperabrupt varactor. These series give the designer a full capacitance range of 10 to 500 pF at 3 or 4 volts of bias, depending on product series. They allow octave tuning of LC tanks through 500 MHz. With a reduced 1.5 to 1 frequency ratio, straight-line-frequency tuning over a 3 to 8 volt tuning range is possible. Ultrahigh Q and excellent large signal handling capabilities, along with a 2 to 1 capacitance ratio, is obtained by tuning from 9 to 20 volts of reverse bias. Linear, wide deviation tuning of VCXO/TCXO's and frequency modulators also results when these diodes are tuned over a 3 to 8 volt bias range.

KV2101-150

SILICON HYPERABRUPT TUNING VARACTOR

SILICONHYPERABRUPTTUNINGVARACTOR

KV2101A

SILICON HYPERABRUPT TUNING VARACTOR

SILICONHYPERABRUPTTUNINGVARACTOR

KV210-3

Power Wirewound Resistors Ceramic case , Vertical

KV210-3

Power Wirewound Ceramic Resistors, vertical

KV2101-00

Package：模具；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 可變電容（變?nèi)萜鳎勺冸娍蛊鳎?描述：SI TVAR NON HERMETIC CHIP