LM2103

具有 8V UVLO、死區(qū)時間和反相輸入引腳的 107V、0.5A/0.8A 半橋柵極驅(qū)動器。; ? 可驅(qū)動兩個采用半橋配置的 N 溝道 MOSFET\n? 8-V GVDD 上的典型欠壓鎖定\n? BST 上的最大絕對電壓為 107V\n? SH 上的 –19.5V 絕對最大負(fù)瞬態(tài)電壓處理\n? 0.5A/0.8A 峰值拉電流/灌電流\n? 典型固定內(nèi)部死區(qū)時間為 475ns\n? 內(nèi)置跨導(dǎo)保護\n? 115ns 典型傳播延遲\n? 反相輸入引腳 INL;

LM2103 是一款緊湊型高壓柵極驅(qū)動器，專為驅(qū)動采用同步降壓或半橋配置的高側(cè)和低側(cè) N 溝道 MOSFET 而設(shè)計。 INL 反相輸入允許在雙路或單路 PWM 輸入應(yīng)用中使用驅(qū)動器。\n\nSH 引腳具有 固定死區(qū)時間以及 –1V 直流和 –19.5V 瞬態(tài)負(fù)電壓處理能力，可提升高噪聲應(yīng)用中的系統(tǒng)穩(wěn)健性。 LM2103 采用與業(yè)界通用引腳排列兼容的 8 引腳 SOIC 封裝。在低側(cè)和高側(cè)電源軌上均提供欠壓鎖定 (UVLO) 功能，以在上電和斷電期間提供保護。

LM2103

LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?8-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrents ?475-nstypicalfixedinte

LM2103DR

絲印：L2103D；Package：SOIC；LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?8-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrents ?475-nstypicalfixedinte

LPA2103

EMI??W

LPC2103

Single-chip16-bit/32-bitmicrocontrollers;8kB/16kB/32kBflashwithISP/IAP,fastportsand10-bitADC

Generaldescription TheLPC2101/2102/2103microcontrollersarebasedona16-bit/32-bitARM7TDMI-SCPUwithreal-timeemulationthatcombinesthemicrocontrollerwith8kB,16kBor32kBofembeddedhigh-speedflashmemory.A128-bitwidememoryinterfaceandauniqueacceleratorarchitecture

LTCEC-2103-RSLASHQ

PowerTransducerSeriesLT-UNIT

LV2103

UHFHYPERABRUPTTUNINGDIODES

UHFHYPERABRUPTTUNINGDIODES ?Applicationfrequenciesupto800MHz ?Lineartuningcapabilitybetween3and8volts ?Diodecapacitancerangesfrom10.5to31pFsupporthigherapplicationfrequencies

LV2103A

UHFHYPERABRUPTTUNINGDIODES

UHFHYPERABRUPTTUNINGDIODES ?Applicationfrequenciesupto800MHz ?Lineartuningcapabilitybetween3and8volts ?Diodecapacitancerangesfrom10.5to31pFsupporthigherapplicationfrequencies

MD2103

3Wmonoaudiopoweramplifier

MD2103DFH

HighvoltageNPNpowertransistorforstandarddefinitionCRTdisplay

Description TheMD2103DFHismanufacturedusingDiffusedCollectorinPlanartechnologyadoptingnewandenhancedhighvoltagestructure. ThenewMDproductseriesshowimprovedsiliconefficiencybrigingupdatedperformancetothehorizontaldeflectionstage. Generalfeatures ■State-of-the-a