MBM29F040C-55PFTN中文資料富士通數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

■ GENERAL DESCRIPTION

The MBM29F040C is a 4M-bit, 5.0 V-only Flash memory organized as 512K bytes of 8 bits each. The MBM29F040C is offered in a 32-pin PLCC and 32-pin TSOP(I) package. This device is designed to be programmed in-system with the standard system 5.0 V VCCsupply. A 12.0 V VPPis not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.

■ FEATURES

? Single 5.0 V read, program and erase Minimizes system level power requirements

? Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

? Compatible with JEDEC-standard byte-wide pinouts

32-pin PLCC (Package suffix: PD)

32-pin TSOP(I) (Package suffix: PF)

32-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)

? Minimum 100,000 write/erase cycles

? High performance

55 ns maximum access time

? Sector erase architecture

8 equal size sectors of 64K bytes each Any combination of sectors can be concurrently erased. Also supports full chip erase.

? Embedded Erase? Algorithms

Automatically pre-programs and erases the chip or any sector

? Embedded Program? Algorithms

Automatically writes and verifies data at specified address

? DataPolling and Toggle Bit feature for detection of program or erase cycle completion

? Low VCCwrite inhibit ≤3.2 V

? Sector protection

Hardware method disables any combination of sectors from write or erase operations

? Erase Suspend/Resume

Suspends the erase operation to allow a read data in another sector within the same device