首頁 >MBR1100E(RL)>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
1.0A100VSchottkydiode | SUNMATE | |||
SchottkyDiodes ■Features ●Lowpowerloss,highefficiency ●Highforwardsurgecurrentcapability ●TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER FEATURES Schottkybarrierchip guardringdieconstructionfortransientprotection Lowforwardloss,highefficiency Highsurgecapability Highcurrentcapabilityandlowforwardvoltagedrop Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplication P | PACELEADERPACELEADER INDUSTRIAL 霈峰霈峰實業(yè)有限公司 | PACELEADER | ||
SCHOTTKYBARRIERRECTIFIERSREVERSEVOLTAGE20TO200VFORWARDCURRENT1.0A DESCRIPTION Th eMBR120FMBR1200Fareavailablein SOD123FLpackage FEATURES ?Metalsiliconjunction,majoritycarrier conduction ?Forsurfacemountedapplications ?Lowpowerloss,highefficiency ?Highforwardsurgecurrentcapability ?Foruseinlowvoltage,highfre | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | ||
AxialLeadRectifier | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
AxialLeadRectifier | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
SCHOTTKYBARRIERRECTIFIER1.0AMPERE100VOLTS AxialLeadRectifier TheserectifiersemploytheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?voltage,high?frequency | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
AxialLeadRectifier | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
AxialLeadRectifier | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
AxialLeadRectifier | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI |
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