首頁 >MC3055P>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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TRANSISTOR(NPN) FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:10A Collector-basevoltage V(BR)CBO:70V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司 | WINNERJOIN | ||
TO-220-3LPlastic-EncapsulateTransistors FEATURES GeneralPurposeandSwitchingApplications | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
ComplementarySiliconpowertransistors(10A/60V/75W) DESCRIPTION TheMJE3055Aisasiliconepitaxial-baseplanarNPNtransistorinTO-220ABpackage. ltisintendedforuseingeneral-purposeamplifierandswitdingapplications. ThecomplementaryPNPtypeisMJE2955A. FEATURES ●Designedforgeneral-purposeswitchingandamplifierapplications. | NELLSEMINell Semiconductor Co., Ltd 尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司 | NELLSEMI | ||
iscSiliconNPNPowerTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
NPN(GENERALPURPOSEANDSWITCHINGAPPLICATIONS) GENERALPUPOSEANDSWITCHINGAPPLICATIONS DCCURRENTGAINSPECIFIEDTO10AMPERES HighCurrentGain-BandwidthProduct(fT=25°C) | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
GeneralPurposeandSwitchingApplications GeneralPurposeandSwitchingApplications ?DCCurrentGainSpecifiedtoIC=10A ?HighCurrentGain-BandwidthProduct:fT=2MHz(Min.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
SILICONEPITAXIALPLANARTRANSISTOR GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose | WINGSWing Shing Computer Components 永盛電子永盛電子(香港)有限公司 | WINGS | ||
POWERTRANSISTORS(10A,60V,75W) COMPLEMENTARYSILICONPOWERTRANSISTORS. | MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | ||
10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS75WATTS ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. ?DCCurrentGainSpecifiedto10Amperes ?HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS ■STMicroelectronicsPREFERRED SALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES DESCRIPTION TheMJE3055TisasiliconEpitaxial-BaseNPN transistorinJedecTO-220package.Itis intendedforpowerswitchingcircuitsand general-purposeamplifiers.Thecomplementary PNPtypeisMJE2955T. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
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