MJD253-1分立半導(dǎo)體產(chǎn)品的晶體管-雙極性晶體管（BJT）-單個規(guī)格書PDF中文資料

MJD253-1屬于分立半導(dǎo)體產(chǎn)品的晶體管-雙極性晶體管（BJT）-單個。由安森美半導(dǎo)體公司制造生產(chǎn)的MJD253-1晶體管 - 雙極性晶體管（BJT）- 單個分立式雙極結(jié)型晶體管 (BJT) 通常在音頻、無線電及其他應(yīng)用中用于構(gòu)建模擬信號放大功能。作為大批量生產(chǎn)的第一批半導(dǎo)體器件之一，對于涉及高頻開關(guān)和在大電流或高電壓下工作的應(yīng)用而言，它們的特性相比某些器件類型不占優(yōu)勢，但對于需要以極小的噪聲和失真構(gòu)建模擬信號的應(yīng)用而言，它們?nèi)匀皇鞘走x技術(shù)。

Complementary Silicon Plastic Power Transistor

DPAK?3 for Surface Mount Applications

Designed for low voltage, low?power, high?gain audio amplifier applications.

Features

? Collector?Emitter Sustaining Voltage ?

VCEO(sus) = 100 Vdc (Min) @ IC

= 10 mAdc

? High DC Current Gain ?

hFE = 40 (Min) @ IC

= 200 mAdc

= 15 (Min) @ IC = 1.0 Adc

? Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

? Straight Lead Version in Plastic Sleeves (“?1” Suffix)

? Low Collector?Emitter Saturation Voltage ?

VCE(sat) = 0.3 Vdc (Max) @ IC

= 500 mAdc

= 0.6 Vdc (Max) @ IC = 1.0 Adc

? High Current?Gain ? Bandwidth Product ?

fT = 40 MHz (Min) @ IC

= 100 mAdc

? Annular Construction for Low Leakage ?

ICBO = 100 nAdc @ Rated VCB

? Epoxy Meets UL 94 V?0 @ 0.125 in

? ESD Ratings: Human Body Model, 3B > 8000 V

Machine Model, C > 400 V

? Pb?Free Packages are Available